Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

Zhou Shouli; Xiong Deping; Qin Yali

doi:10.1088/1674-4926/30/4/044003

J. Semicond. > 2009, Volume 30 > Issue 4 > 044003

SEMICONDUCTOR DEVICES

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

Zhou Shouli, Xiong Deping and Qin Yali

+ Author Affiliations

DOI: 10.1088/1674-4926/30/4/044003

Abstract: Heavy doping of the base in HBTs brings about a bandgap narrowing (BGN) effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavy-doped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.

Key words: HBTs, bandgap narrowing, intrinsic carrier density, band offsets, Kirk effects

1	Origin of the anomalous trends in band alignment of GaX/ZnGeX₂ (X = N, P, As, Sb) heterojunctions Ruyue Cao, Hui-Xiong Deng, Jun-Wei Luo, Su-Huai Wei Journal of Semiconductors, 2019, 40(4): 042102. doi: 10.1088/1674-4926/40/4/042102
2	A novel approach for justification of box-triangular germanium profile in SiGe HBTs Gagan Khanduri, Brishbhan Panwar Journal of Semiconductors, 2015, 36(2): 024002. doi: 10.1088/1674-4926/36/2/024002
3	Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor Yongye Liang, Kyungsoo Jang, S. Velumani, Cam Phu Thi Nguyen, Junsin Yi, et al. Journal of Semiconductors, 2015, 36(2): 024007. doi: 10.1088/1674-4926/36/2/024007
4	Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime Bahniman Ghosh, Partha Mondal, M. W. Akram, Punyasloka Bal, Akshay Kumar Salimath, et al. Journal of Semiconductors, 2014, 35(6): 064001. doi: 10.1088/1674-4926/35/6/064001
5	Effect of p-d exchange with an itinerant carrier in a GaMnAs quantum dot D. Lalitha, A. John Peter Journal of Semiconductors, 2013, 34(7): 072001. doi: 10.1088/1674-4926/34/7/072001
6	Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects P. Vimala, N. B. Balamurugan Journal of Semiconductors, 2013, 34(11): 114001. doi: 10.1088/1674-4926/34/11/114001
7	A Verilog-A large signal model for InP DHBT including thermal effects Yuxia Shi, Zhi Jin, Zhijian Pan, Yongbo Su, Yuxiong Cao, et al. Journal of Semiconductors, 2013, 34(6): 064007. doi: 10.1088/1674-4926/34/6/064007
8	Continuous analytic I–V model for GS DG MOSFETs including hot-carrier degradation effects Toufik Bentrcia, Faycal Djeffal, Abdel Hamid Benhaya Journal of Semiconductors, 2012, 33(1): 014001. doi: 10.1088/1674-4926/33/1/014001
9	Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect Gourab Dutta, Sukla Basu Journal of Semiconductors, 2012, 33(5): 054002. doi: 10.1088/1674-4926/33/5/054002
10	Local charge neutrality condition, Fermi level and majority carrier density of a semiconductor with multiple localized multi-level intrinsic/impurity defects Ken K. Chin Journal of Semiconductors, 2011, 32(11): 112001. doi: 10.1088/1674-4926/32/11/112001
11	Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures Chen Yanhu, Shen Huajun, Liu Xinyu, Xu Hui, Li Ling, et al. Journal of Semiconductors, 2010, 31(10): 104003. doi: 10.1088/1674-4926/31/10/104003
12	A direct-conversion WLAN transceiver baseband with DC offset compensation and carrier leakage reduction Yuan Fang, Yan Jun, Ma Heping, Shi Yin, Dai Fa Foster, et al. Journal of Semiconductors, 2010, 31(10): 105003. doi: 10.1088/1674-4926/31/10/105003
13	Hot carrier effects of SOI NMOS Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng, et al. Journal of Semiconductors, 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006
14	Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization Fu Jun Journal of Semiconductors, 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005
15	An offset-insensitive switched-capacitor bandgap reference with continuous output Zheng Peng, Yan Wei, Zhang Ke, Li Wenhong Journal of Semiconductors, 2009, 30(8): 085006. doi: 10.1088/1674-4926/30/8/085006
16	An Analysis of the Importance of Recombination in the Base Side of the Emitter-Base SCR in Abrupt HBTs Zhou Shouli, Ren Xiaomin Journal of Semiconductors, 2008, 29(4): 741-745.
17	Non-Uniform Emitter Ballasting Resistor Design of Multi-Finger Power HBTs with a Thermal-Electrical Model Jin Dongyue, Zhang Wanrong, Xie Hongyun, Wang Yang, Qiu Jianjun, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 439-442.
18	Alloy Temperature Dependence of Offset Voltage and Ohmic Contact Resistance in Thin Base InGaP/GaAs HBTs Yang Wei, Liu Xunchun, Zhu Min, Wang Runmei, Shen Huajun, et al. Chinese Journal of Semiconductors , 2006, 27(5): 765-768.
19	Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents Zhou Shouli, Cui Hailin, Huang Yongqing, Ren Xiaomin Chinese Journal of Semiconductors , 2006, 27(1): 110-114.
20	Simulation on High-Frequency Performance of AlGaN/GaN HBTs Ran Junxue, Wang Xiaoliang, Wang Cuimei, Wang Junxi, Zeng Yiping, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 147-150.

Search

GET CITATION

Zhou Shouli, Xiong Deping, Qin Yali. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs[J]. Journal of Semiconductors, 2009, 30(4): 044003. doi: 10.1088/1674-4926/30/4/044003

Zhou S L, Xiong D P, Qin Y L. Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs[J]. J. Semicond., 2009, 30(4): 044003. doi: 10.1088/1674-4926/30/4/044003.

Export: BibTex EndNote

Article Metrics

Article views: 4280 Times PDF downloads: 2749 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 15 December 2008 Online: Published: 01 April 2009

Heavy doping of the base in HBTs brings about a bandgap narrowing (BGN) effect, which modifies the intrinsic carrier density and disturbs the band offset, and thus leads to the change of the currents. Based on a thermionic-field-diffusion model that is used to the analyze the performance of an abrupt HBT with a heavy-doped base, the conclusion is made that, although the BGN effect makes the currents obviously change due to the modification of the intrinsic carrier density, the band offsets disturbed by the BGN effect should also be taken into account in the analysis of the electrical characteristics of abrupt HBTs. In addition, the BGN effect changes the bias voltage for the onset of Kirk effects.

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

DOI: 10.1088/1674-4926/30/4/044003

Abstract

References

Proportional views

Catalog

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Considerations of dopant-dependent bandgap narrowing for accurate device simulation in abrupt HBTs

DOI: 10.1088/1674-4926/30/4/044003

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content