Citation: |
Xu Conghui, Gao Peijun, Che Wenyi, Tan Xi, Yan Na , Min Hao. An ultra-low-power CMOS temperature sensor for RFID applications[J]. Journal of Semiconductors, 2009, 30(4): 045003. doi: 10.1088/1674-4926/30/4/045003
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Xu C H, Gao P J, Che W Y, Tan X, Yan N, Min H. An ultra-low-power CMOS temperature sensor for RFID applications[J]. J. Semicond., 2009, 30(4): 045003. doi: 10.1088/1674-4926/30/4/045003.
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An ultra-low-power CMOS temperature sensor for RFID applications
doi: 10.1088/1674-4926/30/4/045003
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Abstract
An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID appli-cations was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 A @ 1.8 V for continuous operation and achieves an accuracy of ±0.65 ℃ from –20 to 120 ℃ after calibration at one temperature. -
References
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