J. Semicond. > 2009, Volume 30 > Issue 5 > 052003

SEMICONDUCTOR PHYSICS

Downward uniformity and optical properties of porous silicon layers

Long Yongfu and Ge Jin

+ Author Affiliations
DOI: 10.1088/1674-4926/30/5/052003

PDF

Abstract: Porous silicon (PS) samples were fabricated by pulse current etching using different times. The down-ward uniformity and optical properties of the PS layers have been investigated using reflectance spectroscopy, photo-luminescence spectroscopy, and scanning electron microscopy (SEM). The relationship between the refractive index and the optical thickness of PS samples and the etching depth has been analyzed in detail. As the etching depth increases, the average refractive index decreases, indicating that the porosity becomes higher, and the formation rate of the optical thickness decreases. Meanwhile, the reflectance spectra exhibit less intense interference oscillations, which mean the uniformity and interface smoothness of the PS layers become worse. In addition, the intensity of PL emission spectra is slightly increased.

Key words: porous silicon

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4269 Times PDF downloads: 1765 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 17 December 2008 Online: Published: 01 May 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Long Yongfu, Ge Jin. Downward uniformity and optical properties of porous silicon layers[J]. Journal of Semiconductors, 2009, 30(5): 052003. doi: 10.1088/1674-4926/30/5/052003 ****Long Y F, Ge J. Downward uniformity and optical properties of porous silicon layers[J]. J. Semicond., 2009, 30(5): 052003. doi: 10.1088/1674-4926/30/5/052003.
      Citation:
      Long Yongfu, Ge Jin. Downward uniformity and optical properties of porous silicon layers[J]. Journal of Semiconductors, 2009, 30(5): 052003. doi: 10.1088/1674-4926/30/5/052003 ****
      Long Y F, Ge J. Downward uniformity and optical properties of porous silicon layers[J]. J. Semicond., 2009, 30(5): 052003. doi: 10.1088/1674-4926/30/5/052003.

      Downward uniformity and optical properties of porous silicon layers

      DOI: 10.1088/1674-4926/30/5/052003
      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-11
      • Revised Date: 2008-12-17
      • Published Date: 2009-04-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return