Citation: |
Su Shi, Liao Xiaoping. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology[J]. Journal of Semiconductors, 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004
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Su S, Liao X P. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology[J]. J. Semicond., 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004.
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A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology
DOI: 10.1088/1674-4926/30/5/054004
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Abstract
This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 V/mW, while the reflection loss is below –14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.-
Keywords:
- MEMS,
- microwave,
- power sensor,
- GaAs MMIC technology,
- power handling
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References
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Proportional views