J. Semicond. > 2009, Volume 30 > Issue 5 > 054005
|

SEMICONDUCTOR DEVICES

Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm

Kang Yuzhu, Li Jianjun, Ding Liang, Yang Zhen, Han Jun, Deng Jun, Zou Deshu and Shen Guangdi

+ Author Affiliations
DOI: 10.1088/1674-4926/30/5/054005

PDF

Abstract: Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm.

Key words: RCLED

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3913 Times PDF downloads: 2356 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 03 December 2008 Online: Published: 01 May 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2009  >  30(5): 054005
      Kang Yuzhu, Li Jianjun, Ding Liang, Yang Zhen, Han Jun, Deng Jun, Zou Deshu, Shen Guangdi. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. Journal of Semiconductors, 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005 ****Kang Y Z, Li J J, Ding L, Yang Z, Han J, Deng J, Zou D S, Shen G D. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. J. Semicond., 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005.
      Citation:
      Kang Yuzhu, Li Jianjun, Ding Liang, Yang Zhen, Han Jun, Deng Jun, Zou Deshu, Shen Guangdi. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. Journal of Semiconductors, 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005 ****
      Kang Y Z, Li J J, Ding L, Yang Z, Han J, Deng J, Zou D S, Shen G D. Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm[J]. J. Semicond., 2009, 30(5): 054005. doi: 10.1088/1674-4926/30/5/054005.
      shu

      Epitaxyand Characteristics of Resonant Cavity LEDs at 650 nm

      DOI: 10.1088/1674-4926/30/5/054005

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-27
      • Revised Date: 2008-12-03
      • Published Date: 2009-04-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return