| Citation: |
Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Guo Qi, Yu Xuefeng. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. Journal of Semiconductors, 2009, 30(5): 055001. doi: 10.1088/1674-4926/30/5/055001
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Zheng Y Z, Lu W, Ren D Y, Wang Y Y, Guo Q, Yu X F. Annealing behavior of radiation damage in JFET-input operational amplifiers[J]. J. Semicond., 2009, 30(5): 055001. doi: 10.1088/1674-4926/30/5/055001.
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Annealing behavior of radiation damage in JFET-input operational amplifiers
DOI: 10.1088/1674-4926/30/5/055001
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Abstract
The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High- and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent ef-fect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.-
Keywords:
- JFET-input operational amplifiers
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References
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Proportional views
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