J. Semicond. > 2009, Volume 30 > Issue 5 > 055008
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SEMICONDUCTOR INTEGRATED CIRCUITS

A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

Peng Yanjun, Song Jiayou, Wang Zhigong and Tsang K F

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DOI: 10.1088/1674-4926/30/5/055008

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Abstract: A 2.4-GHz SiGe HBT power amplifier (PA) with a novel bias current controlling circuit has been realized in IBM 0.35-μm SiGe BiCMOS technology, BiCMOS5PAe. The bias circuit switches the quiescent current to make the PA operate in a high or low power mode. Under a single supply voltage of +3.5 V, the two-stage mode-switchable power amplifier provides a PAE improvement up to 56.7% and 19.2% at an output power of 0 and 20 dBm, respectively, with a reduced quiescent current in the low power mode as compared to only operating the PA in the high power mode. The die size is only 1.32×1.37 mm2.

Key words: power amplifier,  SiGe HBT,  bias circuit

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    Received: 18 August 2015 Revised: 09 November 2008 Online: Published: 01 May 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(5): 055008
      Peng Yanjun, Song Jiayou, Wang Zhigong, Tsang K F. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit[J]. Journal of Semiconductors, 2009, 30(5): 055008. doi: 10.1088/1674-4926/30/5/055008 ****Peng Y J, Song J Y, Wang Z G, Tsang K F. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit[J]. J. Semicond., 2009, 30(5): 055008. doi:  10.1088/1674-4926/30/5/055008.
      Citation:
      Peng Yanjun, Song Jiayou, Wang Zhigong, Tsang K F. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit[J]. Journal of Semiconductors, 2009, 30(5): 055008. doi: 10.1088/1674-4926/30/5/055008 ****
      Peng Y J, Song J Y, Wang Z G, Tsang K F. A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit[J]. J. Semicond., 2009, 30(5): 055008. doi:  10.1088/1674-4926/30/5/055008.
      shu

      A 2.4-GHz SiGe HBT power amplifier with bias current controlling circuit

      DOI: 10.1088/1674-4926/30/5/055008

      • Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China；Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China

      • Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China；School of Information Engineering, Zhengzhou University, Zhengzhou 450052, China

      • Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China

      • Department of Electronic Engineering, City University of Hong Kong, Hong Kong, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-26
      • Revised Date: 2008-11-09
      • Published Date: 2009-04-20

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