SEMICONDUCTOR DEVICES
Abstract: A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced. The current as a function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, , has been derived based on the resistances. For a fixed sample, a linear relationship between and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.
Key words: SiNW
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Received: 18 August 2015 Revised: 15 February 2009 Online: Published: 01 June 2009
| Citation: |
Jiang Yanfeng, Wang Jianping. A novel method using SiNW to measure stress in cantilevers[J]. Journal of Semiconductors, 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007
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Jiang Y F, Wang J P. A novel method using SiNW to measure stress in cantilevers[J]. J. Semicond., 2009, 30(6): 064007. doi: 10.1088/1674-4926/30/6/064007.
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