| Citation: |
Dong Maojin, Chen Zhaoyang, Fan Yanwei, Wang Junhua, Tao Mingde, Cong Xiuyun. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. Journal of Semiconductors, 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007
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Dong M J, Chen Z Y, Fan Y W, Wang J H, Tao M D, Cong X Y. NTC and electrical properties of nickel and gold doped n-type silicon material[J]. J. Semicond., 2009, 30(8): 083007. doi: 10.1088/1674-4926/30/8/083007.
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NTC and electrical properties of nickel and gold doped n-type silicon material
DOI: 10.1088/1674-4926/30/8/083007
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Abstract
Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 ℃, a material with high B-value and low electrical resistivity is obtained. The B–T and R–T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.-
Keywords:
- deep level impurities,
- nickel,
- gold,
- NTC,
- electrical properties
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References
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Proportional views
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