J. Semicond. > 2009, Volume 30 > Issue 9 > 093002
|

SEMICONDUCTOR MATERIALS

Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers

Zhang Shuai, Zhang Zhengxuan, Bi Dawei, Chen Ming, Tian Hao, Yu Wenjie, Wang Ru and Liu Zhangli

+ Author Affiliations
DOI: 10.1088/1674-4926/30/9/093002

PDF

Abstract: Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing. The ID–VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with 60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials.

Key words: SOI

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3804 Times PDF downloads: 1793 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 10 May 2009 Online: Published: 01 September 2009

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2009  >  30(9): 093002
      Zhang Shuai, Zhang Zhengxuan, Bi Dawei, Chen Ming, Tian Hao, Yu Wenjie, Wang Ru, Liu Zhangli. Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers[J]. Journal of Semiconductors, 2009, 30(9): 093002. doi: 10.1088/1674-4926/30/9/093002 ****Zhang S, Zhang Z X, Bi D W, Chen M, Tian H, Yu W J, Wang R, Liu Z L. Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers[J]. J. Semicond., 2009, 30(9): 093002. doi: 10.1088/1674-4926/30/9/093002.
      Citation:
      Zhang Shuai, Zhang Zhengxuan, Bi Dawei, Chen Ming, Tian Hao, Yu Wenjie, Wang Ru, Liu Zhangli. Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers[J]. Journal of Semiconductors, 2009, 30(9): 093002. doi: 10.1088/1674-4926/30/9/093002 ****
      Zhang S, Zhang Z X, Bi D W, Chen M, Tian H, Yu W J, Wang R, Liu Z L. Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers[J]. J. Semicond., 2009, 30(9): 093002. doi: 10.1088/1674-4926/30/9/093002.
      shu

      Effects of Si implantation on the total dose hardness of fully-depleted SIMOX wafers

      DOI: 10.1088/1674-4926/30/9/093002

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-12
      • Revised Date: 2009-05-10
      • Published Date: 2009-08-28

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return