| Citation: |
Ji Gang, Sun Guosheng, Liu Xingfang, Wang Lei, Zhao Wanshun, Zeng Yiping, Li Jinmin. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. Journal of Semiconductors, 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006
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Ji G, Sun G S, Liu X F, Wang L, Zhao W S, Zeng Y P, Li J M. Epitaxial growth on 4H-SiC by TCS as a silicon precursor[J]. J. Semicond., 2009, 30(9): 093006. doi: 10.1088/1674-4926/30/9/093006.
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Abstract
Epitaxial growth on n-type 4H-SiC 8° off-oriented substrates with a size of 10 × 10 mm2 at different temperatures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10 μm2. The homoepitaxial layer was obtained at 1500 ℃ with low growth rate (< 5 μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60–70 μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.-
Keywords:
- 4H-SiC,
- TCS,
- epitaxial growth,
- growth rate
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References
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Proportional views
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