J. Semicond. > 2010, Volume 31 > Issue 1 > 015009

SEMICONDUCTOR INTEGRATED CIRCUITS

A high efficiency charge pump circuit for low power applications

Feng Peng, Li Yunlong and Wu Nanjian

+ Author Affiliations
DOI: 10.1088/1674-4926/31/1/015009

PDF

Abstract: A high efficiency charge pump circuit is designed and realized. The charge transfer switch is biased by the additional capacitor and transistor to eliminate the influence of the threshold voltage. Moreover, the bulk of the switch transistor is dynamically biased so that the threshold voltage gets lower when it is turned on during charge transfer and gets higher when it is turned off. As a result, the efficiency of the charge pump circuit can be improved. A test chip has been implemented in a 0.18 μm 3.3 V standard CMOS process. The measured output voltage of the eight-pumping-stage charge pump is 9.8 V with each pumping capacitor of 0.5 pF at an output current of 0.18 μA, when the clock frequency is 780 kHz and the supply voltage is 2 V. The charge pump and the clock driver consume a total current of 2.9 A from the power supply. This circuit is suitable for low power applications.

Key words: high efficiency low power charge pump circuit high-voltage generator standard CMOS process

1

Novel design techniques for noise-tolerant power-gated CMOS circuits

Rumi Rastogi, Sujata Pandey

Journal of Semiconductors, 2017, 38(1): 015001. doi: 10.1088/1674-4926/38/1/015001

2

High-stage analog accumulator for TDI CMOS image sensors

Jianxin Li, Fujun Huang, Yong Zong, Jing Gao

Journal of Semiconductors, 2016, 37(2): 025001. doi: 10.1088/1674-4926/37/2/025001

3

A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission

Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, et al.

Journal of Semiconductors, 2016, 37(9): 095003. doi: 10.1088/1674-4926/37/9/095003

4

A high efficiency all-PMOS charge pump for 3D NAND flash memory

Liyin Fu, Yu Wang, Qi Wang, Zongliang Huo

Journal of Semiconductors, 2016, 37(7): 075001. doi: 10.1088/1674-4926/37/7/075001

5

A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links

Junsheng Lü, Hao Ju, Mao Ye, Feng Zhang, Jianzhong Zhao, et al.

Journal of Semiconductors, 2013, 34(7): 075002. doi: 10.1088/1674-4926/34/7/075002

6

A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

Wang Honglai, Zhang Xiaoxing, Dai Yujie, Lü Yingjie, Toshimasa Matsuoka, et al.

Journal of Semiconductors, 2011, 32(8): 085009. doi: 10.1088/1674-4926/32/8/085009

7

A high-performance low-power CMOS AGC for GPS application

Lei Qianqian, Xu Qiming, Chen Zhiming, Shi Yin, Lin Min, et al.

Journal of Semiconductors, 2010, 31(2): 025005. doi: 10.1088/1674-4926/31/2/025005

8

Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process

Xu Bulu, Shao Bowen, Lin Xia, Yi Wei, Liu Yun, et al.

Journal of Semiconductors, 2010, 31(9): 095007. doi: 10.1088/1674-4926/31/9/095007

9

Design of high efficiency dual-mode buck DC–DC converter

Lai Xinquan, Zeng Huali, Ye Qiang, He Huisen, Zhang Shasha, et al.

Journal of Semiconductors, 2010, 31(11): 115005. doi: 10.1088/1674-4926/31/11/115005

10

Silicide-block-film effects on high voltage drain-extended MOS transistors

Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, et al.

Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003

11

A high precision programmable bandgap voltage reference design for high resolution ADC

Zhu Tiancheng, Yao Suying, Li Binqiao

Journal of Semiconductors, 2009, 30(7): 075005. doi: 10.1088/1674-4926/30/7/075005

12

Systemon chip thermal vacuum sensor based on standard CMOS process

Li Jinfeng, Tang Zhen'an, Wang Jiaqi

Journal of Semiconductors, 2009, 30(3): 035004. doi: 10.1088/1674-4926/30/3/035004

13

An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC

Zheng Ran, Wei Tingcun, Wang Jia, Gao Deyuan

Journal of Semiconductors, 2009, 30(9): 095015. doi: 10.1088/1674-4926/30/9/095015

14

A novel on-chip high to low voltage power conversion circuit

Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, et al.

Journal of Semiconductors, 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008

15

Sub-1V CMOS Voltage Reference Based on Weighted Vgs

Zhang Xun, Wang Peng, Jin Dongming

Chinese Journal of Semiconductors , 2006, 27(5): 774-777.

16

A Low-Power High-Frequency CMOS Peak Detector

Li Xuechu, Gao Qingyun, Qin Shicai

Chinese Journal of Semiconductors , 2006, 27(10): 1707-1710.

17

Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods

Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao, et al.

Chinese Journal of Semiconductors , 2006, 27(2): 290-293.

18

A Low Power SRAM/SOI Memory Cell Design

Yu Yang, Zhao Qian, Shao Zhibiao

Chinese Journal of Semiconductors , 2006, 27(2): 318-322.

19

Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages

Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei

Chinese Journal of Semiconductors , 2006, 27(2): 294-297.

20

A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region

Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing

Chinese Journal of Semiconductors , 2005, 26(12): 2286-2289.

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 4954 Times PDF downloads: 6158 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 21 September 2009 Online: Published: 01 January 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Feng Peng, Li Yunlong, Wu Nanjian. A high efficiency charge pump circuit for low power applications[J]. Journal of Semiconductors, 2010, 31(1): 015009. doi: 10.1088/1674-4926/31/1/015009 ****Feng P, Li Y L, Wu N J. A high efficiency charge pump circuit for low power applications[J]. J. Semicond., 2010, 31(1): 015009. doi:  10.1088/1674-4926/31/1/015009.
      Citation:
      Feng Peng, Li Yunlong, Wu Nanjian. A high efficiency charge pump circuit for low power applications[J]. Journal of Semiconductors, 2010, 31(1): 015009. doi: 10.1088/1674-4926/31/1/015009 ****
      Feng P, Li Y L, Wu N J. A high efficiency charge pump circuit for low power applications[J]. J. Semicond., 2010, 31(1): 015009. doi:  10.1088/1674-4926/31/1/015009.

      A high efficiency charge pump circuit for low power applications

      DOI: 10.1088/1674-4926/31/1/015009
      • Received Date: 2015-08-18
      • Accepted Date: 2009-04-09
      • Revised Date: 2009-09-21
      • Published Date: 2009-12-29

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return