1 |
Novel design techniques for noise-tolerant power-gated CMOS circuits
Rumi Rastogi, Sujata Pandey
Journal of Semiconductors, 2017, 38(1): 015001. doi: 10.1088/1674-4926/38/1/015001
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2 |
High-stage analog accumulator for TDI CMOS image sensors
Jianxin Li, Fujun Huang, Yong Zong, Jing Gao
Journal of Semiconductors, 2016, 37(2): 025001. doi: 10.1088/1674-4926/37/2/025001
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3 |
A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission
Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, et al.
Journal of Semiconductors, 2016, 37(9): 095003. doi: 10.1088/1674-4926/37/9/095003
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4 |
A high efficiency all-PMOS charge pump for 3D NAND flash memory
Liyin Fu, Yu Wang, Qi Wang, Zongliang Huo
Journal of Semiconductors, 2016, 37(7): 075001. doi: 10.1088/1674-4926/37/7/075001
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5 |
A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links
Junsheng Lü, Hao Ju, Mao Ye, Feng Zhang, Jianzhong Zhao, et al.
Journal of Semiconductors, 2013, 34(7): 075002. doi: 10.1088/1674-4926/34/7/075002
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6 |
A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs
Wang Honglai, Zhang Xiaoxing, Dai Yujie, Lü Yingjie, Toshimasa Matsuoka, et al.
Journal of Semiconductors, 2011, 32(8): 085009. doi: 10.1088/1674-4926/32/8/085009
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7 |
A high-performance low-power CMOS AGC for GPS application
Lei Qianqian, Xu Qiming, Chen Zhiming, Shi Yin, Lin Min, et al.
Journal of Semiconductors, 2010, 31(2): 025005. doi: 10.1088/1674-4926/31/2/025005
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8 |
Design and verification of a 10-bit 1.2-V 100-MSPS D/A IP core based on a 0.13-μm low power CMOS process
Xu Bulu, Shao Bowen, Lin Xia, Yi Wei, Liu Yun, et al.
Journal of Semiconductors, 2010, 31(9): 095007. doi: 10.1088/1674-4926/31/9/095007
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9 |
Design of high efficiency dual-mode buck DC–DC converter
Lai Xinquan, Zeng Huali, Ye Qiang, He Huisen, Zhang Shasha, et al.
Journal of Semiconductors, 2010, 31(11): 115005. doi: 10.1088/1674-4926/31/11/115005
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10 |
Silicide-block-film effects on high voltage drain-extended MOS transistors
Wang Lei, Gao Chao, Liu Bo, Hu Jian, Lee Po, et al.
Journal of Semiconductors, 2009, 30(3): 034003. doi: 10.1088/1674-4926/30/3/034003
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11 |
A high precision programmable bandgap voltage reference design for high resolution ADC
Zhu Tiancheng, Yao Suying, Li Binqiao
Journal of Semiconductors, 2009, 30(7): 075005. doi: 10.1088/1674-4926/30/7/075005
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12 |
Systemon chip thermal vacuum sensor based on standard CMOS process
Li Jinfeng, Tang Zhen'an, Wang Jiaqi
Journal of Semiconductors, 2009, 30(3): 035004. doi: 10.1088/1674-4926/30/3/035004
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13 |
An area-saving and high power efficiency charge pump built in a TFT-LCD driver IC
Zheng Ran, Wei Tingcun, Wang Jia, Gao Deyuan
Journal of Semiconductors, 2009, 30(9): 095015. doi: 10.1088/1674-4926/30/9/095015
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14 |
A novel on-chip high to low voltage power conversion circuit
Wang Hui, Wang Songlin, Lai Xinquan, Ye Qiang, Mou Zaixin, et al.
Journal of Semiconductors, 2009, 30(3): 035008. doi: 10.1088/1674-4926/30/3/035008
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15 |
Sub-1V CMOS Voltage Reference Based on Weighted Vgs
Zhang Xun, Wang Peng, Jin Dongming
Chinese Journal of Semiconductors , 2006, 27(5): 774-777.
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16 |
A Low-Power High-Frequency CMOS Peak Detector
Li Xuechu, Gao Qingyun, Qin Shicai
Chinese Journal of Semiconductors , 2006, 27(10): 1707-1710.
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17 |
Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods
Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao, et al.
Chinese Journal of Semiconductors , 2006, 27(2): 290-293.
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18 |
A Low Power SRAM/SOI Memory Cell Design
Yu Yang, Zhao Qian, Shao Zhibiao
Chinese Journal of Semiconductors , 2006, 27(2): 318-322.
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19 |
Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages
Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei
Chinese Journal of Semiconductors , 2006, 27(2): 294-297.
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20 |
A High Breakdown Voltage Thin SOI Device with a Vertically Linearly Graded Concentration Drift Region
Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing
Chinese Journal of Semiconductors , 2005, 26(12): 2286-2289.
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