| Citation: |
Liu Jianjun, Yan Jinliang, Shi Liang, Li Ting. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. Journal of Semiconductors, 2010, 31(10): 103001. doi: 10.1088/1674-4926/31/10/103001
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Liu J J, Yan J L, Shi L, Li T. Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering[J]. J. Semicond., 2010, 31(10): 103001. doi: 10.1088/1674-4926/31/10/103001.
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Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering
doi: 10.1088/1674-4926/31/10/103001
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Abstract
Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region. -
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