Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-<i>μ</i>c-Si solar cell

Deng Qingwen; Wang Xiaoliang; Xiao Hongling; Ma Zeyu; Zhang Xiaobin; Hou Qifeng; Li Jinmin; Wang Zhanguo

doi:10.1088/1674-4926/31/10/103003

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Deng Qingwen, Wang Xiaoliang, Xiao Hongling, Ma Zeyu, Zhang Xiaobin, Hou Qifeng, Li Jinmin, Wang Zhanguo. Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell[J]. Journal of Semiconductors, 2010, 31(10): 103003. doi: 10.1088/1674-4926/31/10/103003 ****Deng Q W, Wang X L, Xiao H L, Ma Z Y, Zhang X B, Hou Q F, Li J M, Wang Z G. Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell[J]. J. Semicond., 2010, 31(10): 103003. doi: 10.1088/1674-4926/31/10/103003.

Citation:

Deng Q W, Wang X L, Xiao H L, Ma Z Y, Zhang X B, Hou Q F, Li J M, Wang Z G. Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell[J]. J. Semicond., 2010, 31(10): 103003. doi: 10.1088/1674-4926/31/10/103003.

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Theoretical investigation of efficiency of a p-a-SiC:H/i-a-Si:H/n-μc-Si solar cell

DOI: 10.1088/1674-4926/31/10/103003

Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China

Received Date: 2015-08-18
Accepted Date: 2010-03-15
Revised Date: 2010-05-24
Published Date: 2010-10-05

Abstract

Abstract

A solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure (AMPS). The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer, intrinsic layer, n-type layer, and doping density. Results show that it is available and preferable in theory to employ a-SiC:H as a window layer in p-a-SiC:H/i-a-Si:H/n-μc-Si solar cells, and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells.
- solar cell,
- simulation,
- efficiency,
- AMPS

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