Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

Pu Yan; Wang Liang; Yuan Tingting; Ouyang Sihua; Liu Guoguo; Luo Weijun; Liu Xinyu

doi:10.1088/1674-4926/31/10/104002

Article Navigation > Journal of Semiconductors > 2010 > 31(10): 104002

Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002 ****Pu Y, Wang L, Yuan T T, Ouyang S H, Liu G G, Luo W J, Liu X Y. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002.

Citation:

Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, Luo Weijun, Liu Xinyu. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002 ****

Pu Y, Wang L, Yuan T T, Ouyang S H, Liu G G, Luo W J, Liu X Y. Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT[J]. J. Semicond., 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002.

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Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

DOI: 10.1088/1674-4926/31/10/104002

Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received Date: 2015-08-18
Accepted Date: 2010-04-29
Revised Date: 2010-04-29
Published Date: 2010-10-05

Abstract

Abstract

The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.
- AlGaN/GaN HEMT,
- multi-bias CV curves,
- non-linear,
- CV model

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Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

DOI: 10.1088/1674-4926/31/10/104002

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Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

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