王燕, 岳瑞峰, 韩和相, 廖显伯, 王永谦, 刁宏伟, 孔光临. 低碳含量a-Si_(1-x)C_x∶H薄膜的化学键结构[J]. 半导体学报(英文版), 2001, 22(5): 599-603.
| Citation: |
Chen Yanhu, Shen Huajun, Liu Xinyu, Xu Hui, Li Ling, Li Huijun. Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures[J]. Journal of Semiconductors, 2010, 31(10): 104003. doi: 10.1088/1674-4926/31/10/104003
****
Chen Y H, Shen H J, Liu X Y, Xu H, Li L, Li H J. Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures[J]. J. Semicond., 2010, 31(10): 104003. doi: 10.1088/1674-4926/31/10/104003.
|
Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures
DOI: 10.1088/1674-4926/31/10/104003
-
Abstract
The thermal and electro stability of multi-finger heterojunction bipolar transistors (HBTs) with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC–IV test and thermal resistance calculation. Their electro stability was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula. -
References
-
Proportional views
DownLoad: