J. Semicond. > 2010, Volume 31 > Issue 10 > 104005
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SEMICONDUCTOR DEVICES

Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

Li Guoyu, Zhang Yejin, Li Xiaojian and Tian Lilin

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DOI: 10.1088/1674-4926/31/10/104005

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Abstract: Characteristics of a uni-traveling-carrier photodiode (UTC-PD) are investigated. A hydro-dynamic model is introduced which takes into account the electrons' velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift–diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original.

Key words: UTC-PD

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    Received: 18 August 2015 Revised: 02 May 2010 Online: Published: 01 October 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(10): 104005
      Li Guoyu, Zhang Yejin, Li Xiaojian, Tian Lilin. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. Journal of Semiconductors, 2010, 31(10): 104005. doi: 10.1088/1674-4926/31/10/104005 ****Li G Y, Zhang Y J, Li X J, Tian L L. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. J. Semicond., 2010, 31(10): 104005. doi:  10.1088/1674-4926/31/10/104005.
      Citation:
      Li Guoyu, Zhang Yejin, Li Xiaojian, Tian Lilin. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. Journal of Semiconductors, 2010, 31(10): 104005. doi: 10.1088/1674-4926/31/10/104005 ****
      Li G Y, Zhang Y J, Li X J, Tian L L. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. J. Semicond., 2010, 31(10): 104005. doi:  10.1088/1674-4926/31/10/104005.
      shu

      Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model

      DOI: 10.1088/1674-4926/31/10/104005

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-01-07
      • Revised Date: 2010-05-02
      • Published Date: 2010-10-05

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