SEMICONDUCTOR DEVICES
Abstract: Characteristics of a uni-traveling-carrier photodiode (UTC-PD) are investigated. A hydro-dynamic model is introduced which takes into account the electrons' velocity overshoot in the depletion region, which is a more accurate high speed device than using the normal drift–diffuse model. Based on previous results, two modified UTC-PDs are presented, and an optimized device is obtained, the bandwidth of which is more than twice that of the original.
Key words: UTC-PD
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Received: 18 August 2015 Revised: 02 May 2010 Online: Published: 01 October 2010
| Citation: |
Li Guoyu, Zhang Yejin, Li Xiaojian, Tian Lilin. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. Journal of Semiconductors, 2010, 31(10): 104005. doi: 10.1088/1674-4926/31/10/104005
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Li G Y, Zhang Y J, Li X J, Tian L L. Structure optimization of a uni-traveling-carrier photodiode with introduction of a hydro-dynamic model[J]. J. Semicond., 2010, 31(10): 104005. doi: 10.1088/1674-4926/31/10/104005.
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