A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

Zhu Peng; Pan Liyang; Gu Haiming; Qiao Fengying; Deng Ning; Xu Jun

doi:10.1088/1674-4926/31/10/104008

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Zhu Peng, Pan Liyang, Gu Haiming, Qiao Fengying, Deng Ning, Xu Jun. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. Journal of Semiconductors, 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008 ****Zhu P, Pan L Y, Gu H M, Qiao F Y, Deng N, Xu J. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. J. Semicond., 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008.

Citation:

Zhu Peng, Pan Liyang, Gu Haiming, Qiao Fengying, Deng Ning, Xu Jun. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. Journal of Semiconductors, 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008 ****

Zhu P, Pan L Y, Gu H M, Qiao F Y, Deng N, Xu J. A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices[J]. J. Semicond., 2010, 31(10): 104008. doi: 10.1088/1674-4926/31/10/104008.

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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

doi: 10.1088/1674-4926/31/10/104008

Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, Beijing 100084, China

Received Date: 2015-08-18
Accepted Date: 2010-04-02
Revised Date: 2010-05-04
Published Date: 2010-10-05

Abstract

Abstract

A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.
- charge pumping

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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

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