J. Semicond. > 2010, Volume 31 > Issue 10 > 104011

SEMICONDUCTOR DEVICES

MEMS magnetic field sensor based on silicon bridge structure

Du Guangtao, Chen Xiangdong, Lin Qibin, Li Hui and Guo Huihui

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DOI: 10.1088/1674-4926/31/10/104011

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Abstract: A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 mV/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively.

Key words: silicon bridgemagnetic field sensorferromagnetic magnetANSYS simulationmagnetic pressureMEMS

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    Received: 18 August 2015 Revised: 20 May 2010 Online: Published: 01 October 2010

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      Du Guangtao, Chen Xiangdong, Lin Qibin, Li Hui, Guo Huihui. MEMS magnetic field sensor based on silicon bridge structure[J]. Journal of Semiconductors, 2010, 31(10): 104011. doi: 10.1088/1674-4926/31/10/104011 ****Du G T, Chen X D, Lin Q B, Li H, Guo H H. MEMS magnetic field sensor based on silicon bridge structure[J]. J. Semicond., 2010, 31(10): 104011. doi:  10.1088/1674-4926/31/10/104011.
      Citation:
      Du Guangtao, Chen Xiangdong, Lin Qibin, Li Hui, Guo Huihui. MEMS magnetic field sensor based on silicon bridge structure[J]. Journal of Semiconductors, 2010, 31(10): 104011. doi: 10.1088/1674-4926/31/10/104011 ****
      Du G T, Chen X D, Lin Q B, Li H, Guo H H. MEMS magnetic field sensor based on silicon bridge structure[J]. J. Semicond., 2010, 31(10): 104011. doi:  10.1088/1674-4926/31/10/104011.

      MEMS magnetic field sensor based on silicon bridge structure

      DOI: 10.1088/1674-4926/31/10/104011
      • Received Date: 2015-08-18
      • Accepted Date: 2010-03-19
      • Revised Date: 2010-05-20
      • Published Date: 2010-10-05

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