| Citation: |
Zhou Junxiong, Chen Lan, Ruan Wenbiao, Li Zhigang, Shen Weixiang, Ye Tianchun. Dummy fill effect on CMP planarity[J]. Journal of Semiconductors, 2010, 31(10): 106003. doi: 10.1088/1674-4926/31/10/106003
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Zhou J X, Chen L, Ruan W B, Li Z G, Shen W X, Ye T C. Dummy fill effect on CMP planarity[J]. J. Semicond., 2010, 31(10): 106003. doi: 10.1088/1674-4926/31/10/106003.
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Dummy fill effect on CMP planarity
doi: 10.1088/1674-4926/31/10/106003
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Abstract
With the use of a chemical-mechanical polishing (CMP) simulator verified by testing data from a foundry, the effect of dummy fill characteristics, such as fill size, fill density and fill shape, on CMP planarity is analyzed. The results indicate that dummy density has a significant impact on oxide erosion, and copper dishing is in proportion to dummy size. We also demonstrate that cross shape dummy fill can have the best dishing performance at the same density.-
Keywords:
- chemical mechanical polishing
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References
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Proportional views
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