Electronic transport properties of the armchair silicon carbide nanotube

Song Jiuxu; Yang Yintang; Liu Hongxia; Guo Lixin; Zhang Zhiyong

doi:10.1088/1674-4926/31/11/114003

J. Semicond. > 2010, Volume 31 > Issue 11 > 114003

SEMICONDUCTOR DEVICES

Electronic transport properties of the armchair silicon carbide nanotube

Song Jiuxu, Yang Yintang, Liu Hongxia, Guo Lixin and Zhang Zhiyong

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DOI: 10.1088/1674-4926/31/11/114003

Abstract: The electronic transport properties of the armchair silicon carbide nanotube (SiCNT) are investigated by using the combined nonequilibrium Green's function method with density functional theory. In the equilibrium transmission spectrum of the nanotube, a transmission valley of about 2.12 eV is discovered around Fermi energy, which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important, negative differential resistance is found in its current voltage characteristic. This phenomenon originates from the variation of density of states caused by applied bias voltage. These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.

Key words: electronic transport properties, armchair silicon carbide nanotube, negative differential resistance, nonequilibrium Green’s function

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Song Jiuxu, Yang Yintang, Liu Hongxia, Guo Lixin, Zhang Zhiyong. Electronic transport properties of the armchair silicon carbide nanotube[J]. Journal of Semiconductors, 2010, 31(11): 114003. doi: 10.1088/1674-4926/31/11/114003

Song J X, Yang Y T, Liu H X, Guo L X, Zhang Z Y. Electronic transport properties of the armchair silicon carbide nanotube[J]. J. Semicond., 2010, 31(11): 114003. doi: 10.1088/1674-4926/31/11/114003.

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Received: 18 August 2015 Revised: 24 June 2010 Online: Published: 01 November 2010

The electronic transport properties of the armchair silicon carbide nanotube (SiCNT) are investigated by using the combined nonequilibrium Green's function method with density functional theory. In the equilibrium transmission spectrum of the nanotube, a transmission valley of about 2.12 eV is discovered around Fermi energy, which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important, negative differential resistance is found in its current voltage characteristic. This phenomenon originates from the variation of density of states caused by applied bias voltage. These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.

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