Abstract: Impurity deionization on the direct-current current–voltage characteristics from electron–hole recombination (R-DCIV) at SiO₂/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.

Key words: recombination current, impurity deionization, interface traps, MOS transistors