J. Semicond. > 2010, Volume 31 > Issue 12 > 124004

SEMICONDUCTOR DEVICES

Negative bias temperature instability induced single event transient pulse narrowing and broadening

Chen Jianjun, Chen Shuming, Liang Bin and Liu Biwei

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DOI: 10.1088/1674-4926/31/12/124004

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Abstract: The effect of negative bias temperature instability (NBTI) on a single event transient (SET) has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.

Key words: negative bias temperature instabilitysingle event transientnarrowing and broadening

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    Received: 18 August 2015 Revised: 25 July 2010 Online: Published: 01 December 2010

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      Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei. Negative bias temperature instability induced single event transient pulse narrowing and broadening[J]. Journal of Semiconductors, 2010, 31(12): 124004. doi: 10.1088/1674-4926/31/12/124004 ****Chen J J, Chen S M, Liang B, Liu B W. Negative bias temperature instability induced single event transient pulse narrowing and broadening[J]. J. Semicond., 2010, 31(12): 124004. doi: 10.1088/1674-4926/31/12/124004.
      Citation:
      Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei. Negative bias temperature instability induced single event transient pulse narrowing and broadening[J]. Journal of Semiconductors, 2010, 31(12): 124004. doi: 10.1088/1674-4926/31/12/124004 ****
      Chen J J, Chen S M, Liang B, Liu B W. Negative bias temperature instability induced single event transient pulse narrowing and broadening[J]. J. Semicond., 2010, 31(12): 124004. doi: 10.1088/1674-4926/31/12/124004.

      Negative bias temperature instability induced single event transient pulse narrowing and broadening

      DOI: 10.1088/1674-4926/31/12/124004
      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-06
      • Revised Date: 2010-07-25
      • Published Date: 2010-11-25

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