Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

Zhou Hailiang; Hao Yue; Zhang Minxuan

doi:10.1088/1674-4926/31/12/124005

J. Semicond. > 2010, Volume 31 > Issue 12 > 124005

SEMICONDUCTOR DEVICES

Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

Zhou Hailiang, Hao Yue and Zhang Minxuan

+ Author Affiliations

DOI: 10.1088/1674-4926/31/12/124005

Abstract: Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.

Key words: sub-threshold slope, ambipolar conductance, electrostatic doping, BTBT, schottky contact, CNFET

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Zhou Hailiang, Hao Yue, Zhang Minxuan. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping[J]. Journal of Semiconductors, 2010, 31(12): 124005. doi: 10.1088/1674-4926/31/12/124005

Zhou H L, Hao Y, Zhang M X. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping[J]. J. Semicond., 2010, 31(12): 124005. doi: 10.1088/1674-4926/31/12/124005.

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Received: 18 August 2015 Revised: 02 August 2010 Online: Published: 01 December 2010

Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application.

Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

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