Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator

Liu Xueqiang; Bi Weihong; Zhang Tong

doi:10.1088/1674-4926/31/12/124007

J. Semicond. > 2010, Volume 31 > Issue 12 > 124007

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Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator

Liu Xueqiang, Bi Weihong and Zhang Tong

+ Author Affiliations

DOI: 10.1088/1674-4926/31/12/124007

Abstract: Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-cog-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at supply voltages of about 10 V. From a densely packed copolymer brush, a leakage current as low as 2 × 10^-8 A/cm² was obtained. From the measured capacitance–insulator frequency characteristics, a dielectric constant in the range 3.9–5.0 was obtained. By controlling the thickness of the gate dielectric, the threshold voltage was reduced from –3.5 to –2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at low voltage and 1.2 × 10^-3 cm²/(V.s) mobility.

Key words: low voltage OTFT, organic dielectric, low threshold voltage

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Liu Xueqiang, Bi Weihong, Zhang Tong. Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator[J]. Journal of Semiconductors, 2010, 31(12): 124007. doi: 10.1088/1674-4926/31/12/124007

Liu X Q, Bi W H, Zhang T. Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator[J]. J. Semicond., 2010, 31(12): 124007. doi: 10.1088/1674-4926/31/12/124007.

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Received: 18 August 2015 Revised: 19 July 2010 Online: Published: 01 December 2010

Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-cog-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at supply voltages of about 10 V. From a densely packed copolymer brush, a leakage current as low as 2 × 10^-8 A/cm² was obtained. From the measured capacitance–insulator frequency characteristics, a dielectric constant in the range 3.9–5.0 was obtained. By controlling the thickness of the gate dielectric, the threshold voltage was reduced from –3.5 to –2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at low voltage and 1.2 × 10^-3 cm²/(V.s) mobility.

Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator

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