| Citation: |
Liu Xueqiang, Bi Weihong, Zhang Tong. Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator[J]. Journal of Semiconductors, 2010, 31(12): 124007. doi: 10.1088/1674-4926/31/12/124007
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Liu X Q, Bi W H, Zhang T. Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator[J]. J. Semicond., 2010, 31(12): 124007. doi: 10.1088/1674-4926/31/12/124007.
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Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator
doi: 10.1088/1674-4926/31/12/124007
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Abstract
Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-cog-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at supply voltages of about 10 V. From a densely packed copolymer brush, a leakage current as low as 2 × 10-8 A/cm2 was obtained. From the measured capacitance–insulator frequency characteristics, a dielectric constant in the range 3.9–5.0 was obtained. By controlling the thickness of the gate dielectric, the threshold voltage was reduced from –3.5 to –2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at low voltage and 1.2 × 10-3 cm2/(V.s) mobility.-
Keywords:
- low voltage OTFT,
- organic dielectric,
- low threshold voltage
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References
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Proportional views
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