| Citation: |
Jiang Yibo, Wang Shuai, Li Ke, Chen Lei, Du Huan. An improved analytical model for the electric field distribution in an RF-LDMOST structure[J]. Journal of Semiconductors, 2010, 31(12): 124008. doi: 10.1088/1674-4926/31/12/124008
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Jiang Y B, Wang S, Li K, Chen L, Du H. An improved analytical model for the electric field distribution in an RF-LDMOST structure[J]. J. Semicond., 2010, 31(12): 124008. doi: 10.1088/1674-4926/31/12/124008.
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An improved analytical model for the electric field distribution in an RF-LDMOST structure
doi: 10.1088/1674-4926/31/12/124008
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Abstract
This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation. The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution. In particular, the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model. Then ISE TCAD simulations and experiments are processed and their results are in agreement with the analytical model. This model contributes to the comprehension and optimization design of RF-LDMOST.-
Keywords:
- RF-LDMOST
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References
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Proportional views
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