| Citation: |
Zhang Yan, Sun Jinglan, Wang Nili, Han Li, Liu Xiangyang, Li Xiangyang, Meng Xiangjian. Fabrication and characterization of an AlGaN/PZT detector[J]. Journal of Semiconductors, 2010, 31(12): 124015. doi: 10.1088/1674-4926/31/12/124015
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Zhang Y, Sun J L, Wang N L, Han L, Liu X Y, Li X Y, Meng X J. Fabrication and characterization of an AlGaN/PZT detector[J]. J. Semicond., 2010, 31(12): 124015. doi: 10.1088/1674-4926/31/12/124015.
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Abstract
Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p-GaN/SiO2/LaNiO3/PZT/Pt fabricated on a sapphire substrate. Ultraviolet and infrared properties are measured. For the ultraviolet region, a flat band spectral response is achieved in the 302–363 nm band. The detector displays an unbiased responsivity of 0.064 A/W at 355 nm. The current–voltage curve shows that current at zero bias is –1.57 × 10-12 A. This led to a detectivity of 1.81 × 1011 cm . Hz1/2/W. In the infrared region, the detectivity of the detector is 1.58 × 105 cm . Hz1/2/W at 4 μm.-
Keywords:
- AlGaN/PZT
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References
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