| Citation: |
Zhang Caizhen, Wang Yongshun, Liu Chunjuan, Wang Zaixing. A new static induction thyristor with high forward blocking voltage and excellent switching performances[J]. Journal of Semiconductors, 2010, 31(3): 034005. doi: 10.1088/1674-4926/31/3/034005
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Zhang C Z, Wang Y S, Liu C J, Wang Z X. A new static induction thyristor with high forward blocking voltage and excellent switching performances[J]. J. Semicond., 2010, 31(3): 034005. doi: 10.1088/1674-4926/31/3/034005.
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A new static induction thyristor with high forward blocking voltage and excellent switching performances
doi: 10.1088/1674-4926/31/3/034005
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Abstract
A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p+-emitter. Compared with the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4 μs. -
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