J. Semicond. > 2010, Volume 31 > Issue 4 > 042001

SEMICONDUCTOR PHYSICS

Residual impurities and electrical properties of undoped LEC InAs single crystals

Hu Weijie, Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan and Yang Jun

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DOI: 10.1088/1674-4926/31/4/042001

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Abstract: Impurities and their influence on the properties of InAs single crystals have been studied by combining the results of glow discharge mass spectrometry (GDMS), Hall measurements, Raman scattering and infrared absorption. The results indicate that carbon is a major impurity in LEC-InAs single crystals and exhibits a significant influence on the electrical and optical properties.

Key words: InAs

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    Received: 18 August 2015 Revised: 13 November 2009 Online: Published: 01 April 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(4): 042001
      Hu Weijie, Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Jun. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. Journal of Semiconductors, 2010, 31(4): 042001. doi: 10.1088/1674-4926/31/4/042001 ****Hu W J, Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang J. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. J. Semicond., 2010, 31(4): 042001. doi: 10.1088/1674-4926/31/4/042001.
      Citation:
      Hu Weijie, Zhao Youwen, Sun Wenrong, Duan Manlong, Dong Zhiyuan, Yang Jun. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. Journal of Semiconductors, 2010, 31(4): 042001. doi: 10.1088/1674-4926/31/4/042001 ****
      Hu W J, Zhao Y W, Sun W R, Duan M L, Dong Z Y, Yang J. Residual impurities and electrical properties of undoped LEC InAs single crystals[J]. J. Semicond., 2010, 31(4): 042001. doi: 10.1088/1674-4926/31/4/042001.
      shu

      Residual impurities and electrical properties of undoped LEC InAs single crystals

      DOI: 10.1088/1674-4926/31/4/042001

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-10
      • Revised Date: 2009-11-13
      • Published Date: 2010-03-29

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