SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

Shang Haiping; Xu Qiuxia

doi:10.1088/1674-4926/31/5/056001

J. Semicond. > 2010, Volume 31 > Issue 5 > 056001

SEMICONDUCTOR TECHNOLOGY

SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

Shang Haiping and Xu Qiuxia

+ Author Affiliations

DOI: 10.1088/1674-4926/31/5/056001

Abstract: Bymeans of analyzing the I–V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (φB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on theφB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of φB, eff and RNiSi are discussed.

Key words: NiSi/n-Si SJD, effective Schottky barrier height, dopant segregation process

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Shang Haiping, Xu Qiuxia. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. Journal of Semiconductors, 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001

Shang H P, Xu Q X. SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs[J]. J. Semicond., 2010, 31(5): 056001. doi: 10.1088/1674-4926/31/5/056001.

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Received: 18 August 2015 Revised: 07 January 2010 Online: Published: 01 May 2010

Bymeans of analyzing the I–V characteristic curve of NiSi/n-Si Schottky junction diodes (NiSi/n-Si SJDs), abstracting the effective Schottky barrier height (φB, eff) and the ideal factor of NiSi/n-Si SJDs and measuring the sheet resistance of NiSi films (RNiSi), we study the effects of different dopant segregation process parameters, including impurity implantation dose, segregation annealing temperature and segregation annealing time, on theφB, eff of NiSi/n-Si SJDs and the resistance characteristic of NiSi films. In addition, the changing rules of φB, eff and RNiSi are discussed.

SBH adjustment characteristic of the dopant segregation process for NiSi/n-Si SJDs

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