J. Semicond. > 2010, Volume 31 > Issue 6 > 064002
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SEMICONDUCTOR DEVICES

A new small-signal model for asymmetrical AlGaN/GaN HEMTs

Ma Teng, Hao Yue, Chen Chi and Ma Xiaohua

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DOI: 10.1088/1674-4926/31/6/064002

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Abstract: A new small-signal model for anisomerous AlGaN/GaN high electron mobility transistors (HEMTs) is proposed for accurate prediction of HEMT behavior up to 20 GHz. The parasitic elements are extracted from both cold-FET and pinch-off bias to obtain more precise results and the intrinsic part is directly extracted. All the parameters needed in this process are determined by the device structure rather than optimization methods. This guarantees consistency between the parameter values and the component’s physical meaning.

Key words: small-signal model

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    Received: 18 August 2015 Revised: 06 February 2010 Online: Published: 01 June 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(6): 064002
      Ma Teng, Hao Yue, Chen Chi, Ma Xiaohua. A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2010, 31(6): 064002. doi: 10.1088/1674-4926/31/6/064002 ****Ma T, Hao Y, Chen C, Ma X H. A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J]. J. Semicond., 2010, 31(6): 064002. doi: 10.1088/1674-4926/31/6/064002.
      Citation:
      Ma Teng, Hao Yue, Chen Chi, Ma Xiaohua. A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2010, 31(6): 064002. doi: 10.1088/1674-4926/31/6/064002 ****
      Ma T, Hao Y, Chen C, Ma X H. A new small-signal model for asymmetrical AlGaN/GaN HEMTs[J]. J. Semicond., 2010, 31(6): 064002. doi: 10.1088/1674-4926/31/6/064002.
      shu

      A new small-signal model for asymmetrical AlGaN/GaN HEMTs

      DOI: 10.1088/1674-4926/31/6/064002

      • National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China

      • National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China

      • National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China

      • National Key Laboratory of Wide Band-Gap Semiconductor Technology, Department of Microelectronics, Xidian University, Xi’an 710071, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-01
      • Revised Date: 2010-02-06
      • Published Date: 2010-06-03

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