Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

Jiang Wenjing; Xu Chen; Shen Guangdi; Fang Rong; Gao Wei

doi:10.1088/1674-4926/31/6/064008

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Jiang Wenjing, Xu Chen, Shen Guangdi, Fang Rong, Gao Wei. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. Journal of Semiconductors, 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008 ****Jiang W J, Xu C, Shen G D, Fang R, Gao W. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. J. Semicond., 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008.

Citation:

Jiang Wenjing, Xu Chen, Shen Guangdi, Fang Rong, Gao Wei. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. Journal of Semiconductors, 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008 ****

Jiang W J, Xu C, Shen G D, Fang R, Gao W. Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask[J]. J. Semicond., 2010, 31(6): 064008. doi: 10.1088/1674-4926/31/6/064008.

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Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

doi: 10.1088/1674-4926/31/6/064008

Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China

Received Date: 2015-08-18
Accepted Date: 2009-11-26
Revised Date: 2010-01-22
Published Date: 2010-06-03

Abstract

Abstract

This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma. Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs. The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for an 8 μm GaP window layer. The light-power of the nanorod LED is increased by 25% and 13%, respectively.
- AlGaInP-LED

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Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

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