Citation: |
Zhao Jiate, Zhao Yong, Wang Wanjun, Hao Yinlei, Zhou Qiang, Yang Jianyi, Wang Minghua, Jiang Xiaoqing. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. Journal of Semiconductors, 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009
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Zhao J T, Zhao Y, Wang W J, Hao Y L, Zhou Q, Yang J Y, Wang M H, Jiang X Q. Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices[J]. J. Semicond., 2010, 31(6): 064009. doi: 10.1088/1674-4926/31/6/064009.
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Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices
doi: 10.1088/1674-4926/31/6/064009
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Abstract
The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation. Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices, especially for small structure ones. For a device with a 1000 μm modulation length, the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions. A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.-
Keywords:
- plasma dispersion effect
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References
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