Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination

Zhang Qian; Zhang Yuming; Zhang Yimen

doi:10.1088/1674-4926/31/7/074007

J. Semicond. > 2010, Volume 31 > Issue 7 > 074007

SEMICONDUCTOR DEVICES

Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination

Zhang Qian, Zhang Yuming and Zhang Yimen

+ Author Affiliations

DOI: 10.1088/1674-4926/31/7/074007

Abstract: According to the avalanche ionization theory, a computer-based analysis is performed to analyze the structural parameters of single- and multiple-zone junction termination extension (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure. The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability. The influences of the positive and negative surface or interface states on the blocking capability are also shown. These conclusions have a realistic meaning in optimizing the design of a mesa power device.

Key words: 4H-SiC

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Zhang Qian, Zhang Yuming, Zhang Yimen. Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination[J]. Journal of Semiconductors, 2010, 31(7): 074007. doi: 10.1088/1674-4926/31/7/074007

Zhang Q, Zhang Y M, Zhang Y M. Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination[J]. J. Semicond., 2010, 31(7): 074007. doi: 10.1088/1674-4926/31/7/074007.

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Received: 18 August 2015 Revised: 22 February 2010 Online: Published: 01 July 2010

According to the avalanche ionization theory, a computer-based analysis is performed to analyze the structural parameters of single- and multiple-zone junction termination extension (JTE) structures for 4H-SiC bipolar junction transistors (BJTs) with mesa structure. The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability. The influences of the positive and negative surface or interface states on the blocking capability are also shown. These conclusions have a realistic meaning in optimizing the design of a mesa power device.

Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination

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