| Citation: |
Xi Xiaowen, Chai Changchun, Ren Xingrong, Yang Yintang, Ma Zhenyang, Wang Jing. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse[J]. Journal of Semiconductors, 2010, 31(7): 074009. doi: 10.1088/1674-4926/31/7/074009
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Xi X W, Chai C C, Ren X R, Yang Y T, Ma Z Y, Wang J. Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse[J]. J. Semicond., 2010, 31(7): 074009. doi: 10.1088/1674-4926/31/7/074009.
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Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse
DOI: 10.1088/1674-4926/31/7/074009
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Abstract
A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse (EMP) into the bipolar transistor (BJT) is carried out. Research shows that the increase of the external resistor Rb at base makes the burnout time of the device decrease slightly, the increase of the external voltage source Vbe at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage, and the increase of the external resistor Re can remarkably reduce the voltage drops added to the device and improve the durability of the device. In the final analysis, the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown. -
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