J. Semicond. > 2010, Volume 31 > Issue 7 > 074011

SEMICONDUCTOR DEVICES

Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching

Wang Guozheng, Chen Li, Qin Xulei, Wang Ji, Wang Yang, Fu Shencheng and Duanmu Qingduo

+ Author Affiliations
DOI: 10.1088/1674-4926/31/7/074011

PDF

Abstract: Macroporous silicon arrays (MSA) have attracted much attention for their potential applications in photonic crystals, silicon microchannel plates, MEMS devices and so on. In order to fabricate perfect MSA structure, photo-electrochemical (PEC) etching of MSA and the influence of etching current on the pore morphology were studied in detail. The current--voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side illumination. The critical current density JPS was discussed and the basic condition of etching current density for steady MSA growth was proposed. An indirect method was presented to measure the relation of J_PS at the pore tip and etching time. MSA growth was realized with the pore diameter constant by changing the etching current density according to the measuring result of JPS. MSA with 295 μ m of depth and 98 of aspect ratio was obtained.

Key words: current densitymacroporous silicon arraysphoto-electrochemical etchinginitial pits

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3904 Times PDF downloads: 2816 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 10 March 2010 Online: Published: 01 July 2010

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Wang Guozheng, Chen Li, Qin Xulei, Wang Ji, Wang Yang, Fu Shencheng, Duanmu Qingduo. Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J]. Journal of Semiconductors, 2010, 31(7): 074011. doi: 10.1088/1674-4926/31/7/074011 ****Wang G Z, Chen L, Qin X L, Wang J, Wang Y, Fu S C, Duan M Q D. Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J]. J. Semicond., 2010, 31(7): 074011. doi: 10.1088/1674-4926/31/7/074011.
      Citation:
      Wang Guozheng, Chen Li, Qin Xulei, Wang Ji, Wang Yang, Fu Shencheng, Duanmu Qingduo. Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J]. Journal of Semiconductors, 2010, 31(7): 074011. doi: 10.1088/1674-4926/31/7/074011 ****
      Wang G Z, Chen L, Qin X L, Wang J, Wang Y, Fu S C, Duan M Q D. Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching[J]. J. Semicond., 2010, 31(7): 074011. doi: 10.1088/1674-4926/31/7/074011.

      Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching

      DOI: 10.1088/1674-4926/31/7/074011
      • Received Date: 2015-08-18
      • Accepted Date: 2010-02-04
      • Revised Date: 2010-03-10
      • Published Date: 2010-07-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return