| Citation: |
Lin Guijiang, Wu Jyhchiarng, Huang Meichun. Theoretical modeling of the interface recombination effect on the performance of III–V tandem solar cells[J]. Journal of Semiconductors, 2010, 31(8): 082004. doi: 10.1088/1674-4926/31/8/082004
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Lin G J, Wu J, Huang M C. Theoretical modeling of the interface recombination effect on the performance of III–V tandem solar cells[J]. J. Semicond., 2010, 31(8): 082004. doi: 10.1088/1674-4926/31/8/082004.
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Theoretical modeling of the interface recombination effect on the performance of III–V tandem solar cells
DOI: 10.1088/1674-4926/31/8/082004
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Abstract
A typical GaInP/GaInAs/Ge tandem solar cell structure operating under AM0 illumination is proposed, and the current–voltage curves are calculated for different recombination velocities at both front and back-surfaces of the three subcells by using a theoretical model including optical and electrical modules. It is found that the surface recombination at the top GaInP cell is the main limitation for obtaining high efficiency tandem solar cells.-
Keywords:
- interface recombination
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References
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Proportional views
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