Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

Zhang Han; Chen Nuofu; Wang Yu; Yin Zhigang; Zhang Xingwang; Shi Huiwei; Wang Yanshuo; Huang Tianmao

doi:10.1088/1674-4926/31/8/084009

J. Semicond. > 2010, Volume 31 > Issue 8 > 084009

SEMICONDUCTOR DEVICES

Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

Zhang Han, Chen Nuofu, Wang Yu, Yin Zhigang, Zhang Xingwang, Shi Huiwei, Wang Yanshuo and Huang Tianmao

+ Author Affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
School of Renewable Energy Engineering, North China Electric Power University, Beijing 102206, China
National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

DOI: 10.1088/1674-4926/31/8/084009

Abstract: We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP₂/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate. oindent

Key words: III–V semiconductor

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Zhang Han, Chen Nuofu, Wang Yu, Yin Zhigang, Zhang Xingwang, Shi Huiwei, Wang Yanshuo, Huang Tianmao. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. Journal of Semiconductors, 2010, 31(8): 084009. doi: 10.1088/1674-4926/31/8/084009

Zhang H, Chen N F, Wang Y, Yin Z G, Zhang X W, Shi H W, Wang Y S, Huang T M. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. J. Semicond., 2010, 31(8): 084009. doi: 10.1088/1674-4926/31/8/084009.

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Received: 18 August 2015 Revised: 18 November 2009 Online: Published: 01 August 2010

We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP₂/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate. oindent

Design and optimization of a monolithic GaInP/GaInAs tandem solar cell

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