Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

Wang Lai; Hao Zhibiao; Han Yanjun; Luo Yi; Wang Lanxi; Chen Xuekang

doi:10.1088/1674-4926/32/1/014013

J. Semicond. > 2011, Volume 32 > Issue 1 > 014013

SEMICONDUCTOR DEVICES

Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

Wang Lai, Hao Zhibiao, Han Yanjun, Luo Yi, Wang Lanxi and Chen Xuekang

+ Author Affiliations

Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
National Key Laboratory for Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China
National Key Laboratory for Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China

DOI: 10.1088/1674-4926/32/1/014013

Abstract: AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.

Key words: metal organic vapor phase epitaxy

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Received: 18 August 2015 Revised: 30 August 2010 Online: Published: 01 January 2011

AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.

Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

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Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

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