Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

Liu Jin; Chen Yongguang; Tan Zhiliang; Yang Jie; Zhang Xijun; Wang Zhenxing

doi:10.1088/1674-4926/32/10/104003

J. Semicond. > 2011, Volume 32 > Issue 10 > 104003

SEMICONDUCTOR DEVICES

Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

Liu Jin, Chen Yongguang, Tan Zhiliang, Yang Jie, Zhang Xijun and Wang Zhenxing

+ Author Affiliations

DOI: 10.1088/1674-4926/32/10/104003

Abstract: Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

Key words: microwave BJT, ESD, failure mechanism, accumulation effect

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Liu Jin, Chen Yongguang, Tan Zhiliang, Yang Jie, Zhang Xijun, Wang Zhenxing. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge[J]. Journal of Semiconductors, 2011, 32(10): 104003. doi: 10.1088/1674-4926/32/10/104003

Liu J, Chen Y G, Tan Z L, Yang J, Zhang X J, Wang Z X. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge[J]. J. Semicond., 2011, 32(10): 104003. doi: 10.1088/1674-4926/32/10/104003.

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Received: 20 August 2015 Revised: 11 July 2011 Online: Published: 01 October 2011

Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

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