Abstract: The degradation of gate-induced drain leakage (GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter I_DIFF. I_DIFF is the difference of GIDL currents measured under two conditions of drain voltage V_D = 1.4 V and gate voltage V_G = -1.4 V while V_DG is fixed. After the stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region. These trapped holes diminish ΔE_X which is the deference of the lateral electrical field of these two symmetrical measurement conditions in the overlap region so as to make I_DIFF lessening. I_DIFF extracted from GIDL currents decreases with increasing stress time t. The degradation shifts of I_DIFF,MAX (ΔI_DIFF,MAX) follows a power law against t: ΔI_DIFF,MAX ∝t^m, m = 0.3. Hot electron stress is performed to validate the related mechanism.

Key words: GIDL