Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

Chen Yingping; Shang Liwei; Ji Zhuoyu; Wang Hong; Han Maixing; Liu Xin; Liu Ming

doi:10.1088/1674-4926/32/11/114004

J. Semicond. > 2011, Volume 32 > Issue 11 > 114004

SEMICONDUCTOR DEVICES

Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

Chen Yingping, Shang Liwei, Ji Zhuoyu, Wang Hong, Han Maixing, Liu Xin and Liu Ming

+ Author Affiliations

DOI: 10.1088/1674-4926/32/11/114004

Abstract: This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current (also known as zero-current point dispersion) in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors: large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 Ω, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.

Key words: OTFT, sub-threshold current, level 61 RPI a-Si TFT model, equivalent circuit model, HSPICE

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Chen Yingping, Shang Liwei, Ji Zhuoyu, Wang Hong, Han Maixing, Liu Xin, Liu Ming. Analytical model for the dispersion of sub-threshold current in organic thin-film transistors[J]. Journal of Semiconductors, 2011, 32(11): 114004. doi: 10.1088/1674-4926/32/11/114004

Chen Y P, Shang L W, Ji Z Y, Wang H, Han M X, Liu X, Liu M. Analytical model for the dispersion of sub-threshold current in organic thin-film transistors[J]. J. Semicond., 2011, 32(11): 114004. doi: 10.1088/1674-4926/32/11/114004.

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Received: 03 December 2014 Revised: 14 June 2011 Online: Published: 01 November 2011

This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current (also known as zero-current point dispersion) in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors: large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 Ω, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.

Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

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