| Citation: |
Guo Enqing, Liu Zhiqiang, Wang Liancheng, Yi Xiaoyan, Wang Guohong. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. Journal of Semiconductors, 2011, 32(6): 064007. doi: 10.1088/1674-4926/32/6/064007
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Guo E Q, Liu Z Q, Wang L C, Yi X Y, Wang G H. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer[J]. J. Semicond., 2011, 32(6): 064007. doi: 10.1088/1674-4926/32/6/064007.
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Optical and electrical characteristics of GaN vertical light emitting diode with current block layer
DOI: 10.1088/1674-4926/32/6/064007
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Abstract
A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6% and 60.7% higher than that of vertical LEDs without a CBL at 350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%, 78% and 85.5% of their maximum efficiency at 350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.-
Keywords:
- current block layer,
- efficiency drop,
- vertical LED,
- non-ohmic contact
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References
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