J. Semicond. > 2011, Volume 32 > Issue 9 > 092001

SEMICONDUCTOR PHYSICS

SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

Wang Yuanming, Guo Hongxia, Zhang Fengqi, Zhang Keying, Chen Wei, Luo Yinhong and Guo Xiaoqiang

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DOI: 10.1088/1674-4926/32/9/092001

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Abstract: The protons in the secondary beam in the Beijing Electron Positron Collider (BEPC) are first analyzed and a large proportion at the energy of 50-100 MeV supply a source gap of high energy protons. In this study, the proton energy spectrum of the secondary beam was obtained and a model for calculating the proton single event upset (SEU) cross section of a static random access memory (SRAM) cell has been presented in the BEPC secondary beam proton radiation environment. The proton SEU cross section for different characteristic dimensions has been calculated. The test of SRAM SEU cross sections has been designed, and a good linear relation between SEUs in SRAM and the fluence was found, which is evidence that an SEU has taken place in the SRAM. The SEU cross sections were measured in SRAM with different dimensions. The test result shows that the SEU cross section per bit will decrease with the decrease of the characteristic dimensions of the device, while the total SEU cross section still increases upon the increase of device capacity. The test data accords with the calculation results, so the high-energy proton SEU test on the proton beam in the BEPC secondary beam could be conducted.

Key words: BEPC

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    Received: 20 August 2015 Revised: 20 April 2011 Online: Published: 01 September 2011

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      Wang Yuanming, Guo Hongxia, Zhang Fengqi, Zhang Keying, Chen Wei, Luo Yinhong, Guo Xiaoqiang. SRAM single event upset calculation and test using protons in the secondary beam in the BEPC[J]. Journal of Semiconductors, 2011, 32(9): 092001. doi: 10.1088/1674-4926/32/9/092001 ****Wang Y M, Guo H X, Zhang F Q, Zhang K Y, Chen W, Luo Y H, Guo X Q. SRAM single event upset calculation and test using protons in the secondary beam in the BEPC[J]. J. Semicond., 2011, 32(9): 092001. doi: 10.1088/1674-4926/32/9/092001.
      Citation:
      Wang Yuanming, Guo Hongxia, Zhang Fengqi, Zhang Keying, Chen Wei, Luo Yinhong, Guo Xiaoqiang. SRAM single event upset calculation and test using protons in the secondary beam in the BEPC[J]. Journal of Semiconductors, 2011, 32(9): 092001. doi: 10.1088/1674-4926/32/9/092001 ****
      Wang Y M, Guo H X, Zhang F Q, Zhang K Y, Chen W, Luo Y H, Guo X Q. SRAM single event upset calculation and test using protons in the secondary beam in the BEPC[J]. J. Semicond., 2011, 32(9): 092001. doi: 10.1088/1674-4926/32/9/092001.

      SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

      DOI: 10.1088/1674-4926/32/9/092001
      • Received Date: 2015-08-20
      • Accepted Date: 2011-03-13
      • Revised Date: 2011-04-20
      • Published Date: 2011-08-31

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