A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT

Hao Mingli; Zhang Zongnan; Zhang Haiying

doi:10.1088/1674-4926/32/9/094003

J. Semicond. > 2011, Volume 32 > Issue 9 > 094003

SEMICONDUCTOR DEVICES

A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT

Hao Mingli, Zhang Zongnan and Zhang Haiying

+ Author Affiliations

DOI: 10.1088/1674-4926/32/9/094003

Abstract: This paper presents a 3.4-3.6 GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under V_cc = 4.3 V and V_bias = 3.3 V, a P_1dB of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64 dBc and -51 dBc, respectively. In addition, this PA shows a linear gain more than 28 dB with S₁₁ < -12.4 dB and S₂₂ < -7.4 dB in 3.4-3.6 GHz band.

Key words: 3.4-3.6 GHz, InGaP HBT, PA

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1	A 20-GHz ultra-high-speed InP DHBT comparator Huang Zhenxing, Zhou Lei, Su Yongbo, Jin Zhi Journal of Semiconductors, 2012, 33(7): 075003. doi: 10.1088/1674-4926/33/7/075003
2	An on-chip temperature compensation circuit for an InGaP/GaAs HBT RF power amplifier Li Chengzhan, Chen Zhijian, Huang Jiwei, Wang Yongping, Ma Chuanhui, et al. Journal of Semiconductors, 2011, 32(3): 035009. doi: 10.1088/1674-4926/32/3/035009
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5	The microwave large signal load line of an InGaP HBT Zhao Lixin, Jin Zhi, Liu Xinyu Journal of Semiconductors, 2010, 31(4): 044004. doi: 10.1088/1674-4926/31/4/044004
6	Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characterization Fu Jun Journal of Semiconductors, 2009, 30(8): 084005. doi: 10.1088/1674-4926/30/8/084005
7	A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT Wang Xiantai, Shen Huajun, Jin Zhi, Chen Yanhu, Liu Xinyu, et al. Journal of Semiconductors, 2009, 30(2): 025005. doi: 10.1088/1674-4926/30/2/025005
8	Microwave dynamic large signal waveform characterization of advanced InGaP HBT for power amplifiers Zhao Lixin, Jin Zhi, Liu Xinyu Journal of Semiconductors, 2009, 30(12): 124008. doi: 10.1088/1674-4926/30/12/124008
9	An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band Chen Yanhu, Shen Huajun, Wang Xiantai, Chen Gaopeng, Liu Xinyu, et al. Journal of Semiconductors, 2008, 29(11): 2098-2100.
10	A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness Zhu Min, Yin Junjian, Zhang Haiying Journal of Semiconductors, 2008, 29(8): 1441-1444.
11	A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application Bi Xiaojun, Zhang Haiying, Chen Liqiang, Huang Qinghua Journal of Semiconductors, 2008, 29(10): 1868-1872.
12	X Band MMIC Power Amplifier Based on InGaP/GaAs HBT Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al. Chinese Journal of Semiconductors , 2007, 28(5): 759-762.
13	DC Performance of InGaP/GaAs HBT with Two Different Structures。 Lin Ling, Xu Anhuai, Sun Xiaowei, Qi Ming Chinese Journal of Semiconductors , 2007, 28(S1): 426-429.
14	A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications Chen Liqiang, Zhang Jian, Li Zhiqiang, Chen Pufeng, Zhang Haiying, et al. Chinese Journal of Semiconductors , 2007, 28(6): 823-828.
15	GaAsSb/InAlAs PA DHBTs Grown by Production MBE Zhu H J, Kuo J M, Pinsukanjana P, Vargason K, et al. Chinese Journal of Semiconductors , 2006, 27(4): 635-640.
16	Fabrication of a New-Layout InGaP/GaAs HBT Yang Wei, Liu Xunchun, 朱旻, Zhu Min, Wang Runmei, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1604-1607.
17	C-Band 3.5W/mm InGaP/GaAs HBT Power Transistors with ＞40% Power-Added Efficiency Shen Huajun, Chen Yanhu, Yan Beiping, 葛霁, Ge Ji, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1612-1615.
18	A Novel InGaP/InGaAs/GaAs DHBT Grown by MBE Using Beryllium as p-Type Dopant Su Shubing, Xu Anhuai, Liu Xinyu, Qi Ming, Liu Xunchun, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1064-1067.
19	高功率附加效率的InGaP/GaAs功率HBT 郑丽萍, 袁志鹏, 樊宇伟, 孙海锋, 狄浩成, et al. Chinese Journal of Semiconductors , 2005, 26(1): 92-95.
20	100mm InGaP/GaAs HBT及相关电路关键工艺石瑞英, 孙海锋, 刘训春, 刘洪民 Chinese Journal of Semiconductors , 2005, 26(1): 106-110.

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Hao Mingli, Zhang Zongnan, Zhang Haiying. A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT[J]. Journal of Semiconductors, 2011, 32(9): 094003. doi: 10.1088/1674-4926/32/9/094003

Hao M L, Zhang Z N, Zhang H Y. A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT[J]. J. Semicond., 2011, 32(9): 094003. doi: 10.1088/1674-4926/32/9/094003.

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Received: 20 August 2015 Revised: 03 May 2011 Online: Published: 01 September 2011

This paper presents a 3.4-3.6 GHz power amplifier (PA) designed and implemented in InGaP/GaAs HBT technology. By optimizing the off-chip output matching network and designing an extra input-matching circuit on the PCB, several problems are resolved, such as resonant frequency point migration, worse matching and lower gain caused by parasitics inside and outside of the chip. Under V_cc = 4.3 V and V_bias = 3.3 V, a P_1dB of 27.1 dBm has been measured at 3.4 GHz with a PAE of 25.8%, the 2nd and 3rd harmonics are -64 dBc and -51 dBc, respectively. In addition, this PA shows a linear gain more than 28 dB with S₁₁ < -12.4 dB and S₂₂ < -7.4 dB in 3.4-3.6 GHz band.

A 3.4-3.6 GHz power amplifier in an InGaP/GaAs HBT

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