| Citation: |
Mihir M. Vora, Aditya M. Vora. Effect of rhenium doping on various physical properties of single crystals of MoSe2[J]. Journal of Semiconductors, 2012, 33(1): 012001. doi: 10.1088/1674-4926/33/1/012001
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M M Vora, A M Vora. Effect of rhenium doping on various physical properties of single crystals of MoSe2[J]. J. Semicond., 2012, 33(1): 012001. doi: 10.1088/1674-4926/33/1/012001.
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Effect of rhenium doping on various physical properties of single crystals of MoSe2
DOI: 10.1088/1674-4926/33/1/012001
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Abstract
Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Se1.995, MoRe0.001Se1.999 and Mo0.995Re0.005Se2, which is grown by using the direct vapor transport (DVT) technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. -
References
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