Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

doi:10.1088/1674-4926/33/1/014002

J. Semicond. > 2012, Volume 33 > Issue 1 > 014002

SEMICONDUCTOR DEVICES

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

Ma Juncai, Zhang Jincheng, Xue Junshuai, Lin Zhiyu, Liu Ziyang, Xue Xiaoyong, Ma Xiaohua and Hao Yue

+ Author Affiliations

Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

DOI: 10.1088/1674-4926/33/1/014002

Abstract: We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (～ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (～ 50 V) for the device with gate dimensions of 0.5 × 100 μ m and a gate-drain distance of 1 μ m. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

Key words: AlGaN/GaN/AlGaN double heterojunctions, breakdown voltage, carrier confinement

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Ma Juncai, Zhang Jincheng, Xue Junshuai, Lin Zhiyu, Liu Ziyang, Xue Xiaoyong, Ma Xiaohua, Hao Yue. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J]. Journal of Semiconductors, 2012, 33(1): 014002. doi: 10.1088/1674-4926/33/1/014002

Ma J C, Zhang J C, Xue J S, Lin Z Y, Liu Z Y, Xue X Y, Ma X H, Hao Y. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J]. J. Semicond., 2012, 33(1): 014002. doi: 10.1088/1674-4926/33/1/014002.

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Received: 03 December 2014 Revised: 08 August 2011 Online: Published: 01 January 2012

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (～ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (～ 50 V) for the device with gate dimensions of 0.5 × 100 μ m and a gate-drain distance of 1 μ m. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

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