A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE

Ge Qin; Chen Xiaojuan; Luo Weijun; Yuan Tingting; Pu Yan; Liu Xinyu

doi:10.1088/1674-4926/33/1/014003

J. Semicond. > 2012, Volume 33 > Issue 1 > 014003

SEMICONDUCTOR DEVICES

A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE

Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan and Liu Xinyu

+ Author Affiliations

DOI: 10.1088/1674-4926/33/1/014003

Abstract: We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate. The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic (3D-EM) simulator, the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W), PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at V_ds = 30 V and V_gs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.

Key words: Ku-band, AlGaN/GaN HEMTs, IMPA, output power, PAE

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1	Design, fabrication and characterising of 100 W GaN HEMT for Ku-bandapplication Chunjiang Ren, Shichang Zhong, Yuchao Li, Zhonghui Li, Yuechan Kong, et al. Journal of Semiconductors, 2016, 37(8): 084002. doi: 10.1088/1674-4926/37/8/084002
2	Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress Lei Shi, Shiwei Feng, Kun Liu, Yamin Zhang Journal of Semiconductors, 2015, 36(7): 074005. doi: 10.1088/1674-4926/36/7/074005
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7	A 900 MHz, 21 dBm CMOS linear power amplifier with 35% PAE for RFID readers Han Kefeng, Cao Shengguo, Tan Xi, Yan Na, Wang Junyu, et al. Journal of Semiconductors, 2010, 31(12): 125005. doi: 10.1088/1674-4926/31/12/125005
8	A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate Wang Dongfang, Chen Xiaojuan, Liu Xinyu Journal of Semiconductors, 2010, 31(2): 024001. doi: 10.1088/1674-4926/31/2/024001
9	High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu Journal of Semiconductors, 2010, 31(3): 034001. doi: 10.1088/1674-4926/31/3/034001
10	Impact of UV/ozone surface treatment on AlGaN/GaN HEMTs Yuan Tingting, Liu Xinyu, Zheng Yingkui, Li Chengzhan, Wei Ke, et al. Journal of Semiconductors, 2009, 30(12): 124001. doi: 10.1088/1674-4926/30/12/124001
11	60Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors Gu Wenping, Chen Chi, Duan Huantao, Hao Yue, Zhang Jincheng, et al. Journal of Semiconductors, 2009, 30(4): 044002. doi: 10.1088/1674-4926/30/4/044002
12	Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi, et al. Journal of Semiconductors, 2008, 29(12): 2385-2388.
13	X-Band Internally-Matched GaN HEMTs Wang Yong, Li Jingqiang, Zhang Zhiguo, Feng Zhen, Song Jianbo, et al. Journal of Semiconductors, 2008, 29(9): 1783-1785.
14	A 2GHz Power Amplifier Realized in IBM SiGe BiCMOS Technology 5PAe Song Jiayou, Wang Zhigong, Peng Yanjun Journal of Semiconductors, 2008, 29(11): 2101-2105.
15	An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, et al. Journal of Semiconductors, 2008, 29(8): 1445-1448.
16	Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si3N4 Passivation Li Chengzhan, Liu Dan, Zheng Yingkui, Liu Xinyu, Liu Jian, et al. Journal of Semiconductors, 2008, 29(2): 329-333.
17	Preparation and Properties of AlGaN/AIN/GaN HEMTs with Compositionally Step-Graded AIGaN Barrier Layer Ma Zhiyong, Wang Xiaoliang, Hu Guoxin, Xiao Hongling, Wang Cuimei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 3944-3943.
18	AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band Yao Xiaojiang, Li Bin, Chen Yanhu, Chen Xiaojuan, Wei Ke, et al. Chinese Journal of Semiconductors , 2007, 28(4): 514-517.
19	Ku-Band 20W GaAs Power PHEMT Zhong Shichang, Chen Tangsheng Chinese Journal of Semiconductors , 2006, 27(10): 1804-1807.
20	Effect of an AlN Spacer Layer on AlGaN/GaN HEMTs Zhang Jincheng, Wang Chong, Yang Yan, Zhang, Zhang Jinfeng, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2396-2400.

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Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan, Liu Xinyu. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE[J]. Journal of Semiconductors, 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003

Ge Q, Chen X J, Luo W J, Yuan T T, Pu Y, Liu X Y. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE[J]. J. Semicond., 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003.

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Received: 20 August 2015 Revised: 04 August 2011 Online: Published: 01 January 2012

We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate. The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic (3D-EM) simulator, the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W), PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at V_ds = 30 V and V_gs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.

A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE

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