| Citation: |
Ge Qin, Chen Xiaojuan, Luo Weijun, Yuan Tingting, Pu Yan, Liu Xinyu. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE[J]. Journal of Semiconductors, 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003
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Ge Q, Chen X J, Luo W J, Yuan T T, Pu Y, Liu X Y. A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE[J]. J. Semicond., 2012, 33(1): 014003. doi: 10.1088/1674-4926/33/1/014003.
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A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
DOI: 10.1088/1674-4926/33/1/014003
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Abstract
We report a high power Ku band internally matched power amplifier (IMPA) with high power added efficiency (PAE) using 0.3 μm AlGaN/GaN high electron mobility transistors (HEMTs) on 6H-SiC substrate. The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic (3D-EM) simulator, the amplifier demonstrates a maximum output power of 42.5 dBm (17.8 W), PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vds = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.-
Keywords:
- Ku-band,
- AlGaN/GaN HEMTs,
- IMPA,
- output power,
- PAE
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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