| Citation: |
Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004
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Cheng W, Zhao Y, Gao H C, Chen C, Yang N B. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V[J]. J. Semicond., 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004.
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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V
DOI: 10.1088/1674-4926/33/1/014004
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Abstract
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1 × 15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BV_CEO ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.-
Keywords:
- InP,
- double heterojunction bipolar transistor,
- planarization
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References
[1] [2] [3] [4] [5] [6] [7] [8] -
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