| Citation: |
M. Ashry, S. Fares. Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells[J]. Journal of Semiconductors, 2012, 33(10): 102001. doi: 10.1088/1674-4926/33/10/102001
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M. Ashry, S. Fares. Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells[J]. J. Semicond., 2012, 33(10): 102001. doi: 10.1088/1674-4926/33/10/102001.
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Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heterojunction photovoltaic solar cells
doi: 10.1088/1674-4926/33/10/102001
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Abstract
The efficiency and radiation resistance of solar cells are graded. They are then fabricated in the form of n-CdeSe(In)/p-Si heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a p-Si single crystal wafer with a thickness of 100 μm and a resistivity of ～ 1.5 Ω·cm at a temperature of 473 K. The short-circuit current density (jsc), open-circuit voltage (Voc), fill factor (ff) and conversion efficiency (η) under 100 mW/cm2 (AM1) intensity, are 20 mA/cm2, 0.49 V, 0.71 and 6% respectively. The cells were exposed to different electron doses (electron beam accelerator of energy 1.5 MeV, and beam intensity 25 mA). The cell performance parameters are measured and discussed before and after gamma and electron beam irradiation. -
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